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AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specifications). AO8803L is a Green Product ordering option. AO8803 and AO8803L are electrically identical.
Features
VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18m (VGS = -4.5V) RDS(ON) < 22m (VGS = -2.5V) RDS(ON) < 29m (VGS = -1.8V) ESD Rating: 4KV HBM
D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 G2
D2
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -12 8 -7 -5.8 -20 1.4 0.9 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 73 96 63
Max 90 125 75
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8803
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-9.6V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-7A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-6A VGS=-1.8V, ID=-5A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -20 15 19 18 22 28 34 -0.78 -1 -2.5 3960 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 910 757 6.9 36.6 VGS=-4.5V, VDS=-6V, ID=-7A 3.4 10 15 VGS=-4.5V, VDS=-6V, RL=0.86, RGEN=3 IF=-7A, dI/dt=100A/s IF=-7A, dI/dt=100A/s 43 158 95 49 19.4 60 8.5 44 4750 18 23 22 29 -0.55 Min -12 -1 -5 1 10 -1 A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Typ Max Units V A A A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4 : September 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 1.6 ID=-6A, VGS=-2.5V 1.4 ID=-5A, VGS=-1.8V -8V -3.0V -1.5V -ID (A) -ID(A) -2.0V 6 125C 4 25C VGS=-1.0V 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS(Volts) Figure 2: Transfer Characteristics 10 VDS=-5V 8
25 RDS(ON) (m)
VGS=-1.8V
20
VGS=-2.5V
1.2
ID=-7A, VGS=-4.5V
15 VGS=-4.5V 10 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 45 40 RDS(ON) (m) 35 30 25 20 15 10 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-7A
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 -IS (A) 25C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C
Alpha & Omega Semiconductor, Ltd.
AO8803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 5 10 15 20 25 30 35 40 45 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-7A Capacitance (pF) 6400 5600 4800 4000 3200 2400 1600 800 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms Power (W)
40
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
30
20
1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) 10
10ms 0.1s
10
100
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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